Carrier redistribution between different potential sites in semipolar ð20 21Þ InGaN quantum wells studied by near-field photoluminescence
نویسندگان
چکیده
منابع مشابه
Atomic-scale nanofacet structure in semipolar ð20 2 1Þ and ð20 21Þ InGaN single quantum wells
Atomic-scale nanofacets were observed in semipolar ð20 2 1Þ and ð20 21Þ InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of ð10 10Þ, ð10 1 1Þ; and ð10 11Þ planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet stru...
متن کاملNear-field investigation of spatial variations of ð20 2 1Þ InGaN quantum well emission spectra
Scanning near-field optical spectroscopy was applied to semipolar ð20 2 1Þ InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence on the growth conditions. In the most uniform QW, photoluminescence (PL) spectra were found to be narrow with small peak wavelength and spectral width variations. A QW grown at reduced temperature showed sub-micrometer size PL...
متن کاملValence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices
Nonpolar and semipolar III–nitride quantum wells (QWs) and devices have been extensively studied due to their unique valence band (VB) structure and polarized optical emission. Unlike conventional c-plane oriented III–nitride QWs, the low crystal symmetry and unbalanced biaxial stress in nonpolar and semipolar QWs separates the topmost VBs and gives rise to polarized optical emission. Since the...
متن کاملExcitonic field screening and bleaching in InGaN/GaN multiple quantum wells
Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of ,140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. ...
متن کاملInvestigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis
The V-pits and potential fluctuations in InGaN/GaN multiple quantum wells (MQWs) are key factors for understanding the performance of InGaN/GaN-based light-emitting diodes (LEDs). However, photoluminescence (PL) measurements using conventional optical microscopy only provide ensemble information due to the spatial resolution limit, known as the diffraction barrier, which hinders the analysis of...
متن کامل